pocketimplant

2021年1月16日—ThisisknownaspocketimplantationandthenewdevicestructurethusobtainediscalledpocketimplantedMOSFET....pocketimplantMOSFET.will ...,Abstract:Pocketimplantiswidelyusedindeep-sub-micronCMOStechnologiestocombatshortchanneleffects.It,however,bringsanomalouslylarge ...,由JWWu著作·2004·被引用42次—Ourresultshowsthatpocketimplantationwillsignificantlydegradedevicelow-frequencynoiseprimarily...

參考資訊如下
(PDF) A Review of the Fabrication Process of the Pocket ...

2021年1月16日 — This is known as pocket implantation and the new device structure thus obtained is called pocket implanted MOSFET. ... pocket implant MOSFET. will ...

Modeling of pocket implanted MOSFETs for anomalous ...

Abstract: Pocket implant is widely used in deep-sub-micron CMOS technologies to combat short channel effects. It, however, brings anomalously large ...

Pocket Implantation Effect on Drain Current Flicker Noise in ...

由 JW Wu 著作 · 2004 · 被引用 42 次 — Our result shows that pocket implantation will significantly degrade device low-frequency noise primarily because of nonuniform threshold voltage distribution.

Study of pocket implant parameters for 0.18 µm CMOS

由 J Schmitz 著作 — The main advantages of pocket implants over a super steep retrograde well are, that they are implanted later in the process flow and thus endure less thermal ...

[SOLVED]

pocket implant. Pocket implants are used to avoid Punch through effects in short-channel devices. they are heavily doped (unlike LDD) small regions of ...

超薄層矽金氧半場效電晶體在不同汲極與袋型摻雜濃度對短 ...

... (Pocket Implant)來改善元件短通道效應；而在本篇將使用到這兩項製程，摻雜和植入不同濃度的量在UTB SOI元件，來探討不同高低摻雜濃度的LDD與Pocket對元件電性與可靠度 ...

輕摻汲極與袋型結構佈植濃度對超 ...

此兩種製程的功用，LDD 主要是防. 止熱載子效應，並提升元件電性；而Pocket 主要目的是抑制汲極引起的位能下降(Drain-Induced. Barrier Lowering,DIBL)造成臨界電壓的變化 ...

輕摻汲極與袋型結構佈植濃度對超薄型矽覆蓋絕緣層元件 ...

本篇所要討論在超薄型矽覆蓋絕緣層(UTB SOI)元件裡面低摻雜汲極(LDD)和袋型(Pocket)植入高低摻雜的濃度對元件基本電性造成的影響。此兩種製程的功用，LDD主要是防止熱 ...

金氧半電晶體中通道不均勻由RTN 引發電流擾動效應

由 薛至宸 著作 · 2005 — By using SONOS channel hot electron programming, we confirm that pocket implant indeed has influence on RTN noise. Length effect on pMOSFETs is studied in this ...